s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t n- ch an n el m osf et bs h105 ( k s h 1 0 5 ) f e a tu r e s v d s ( v ) = 2 0 v i d = 1 . 0 5 a ( v g s = 1 0 v ) r d s ( o n ) 2 0 0 m ( v g s = 4 . 5 v ) r d s ( o n ) 2 5 0 m ( v g s = 2 . 5 v ) r d s ( o n ) 3 0 0 m ( v g s = 1 . 8 v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . gate 2 . source 3 . drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 2 0 v d g r 2 0 v g s 8 t a = 2 5 1 . 0 5 t a = 1 0 0 0 . 6 7 i d m 4 . 2 t a = 2 5 4 1 7 t a = 1 0 0 1 7 0 r t h ja 3 0 0 / w t j 1 5 0 t st g - 5 5 t o 1 5 0 v a p u l s e d d r a i n c u r r e n t p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e d r a i n - g a t e v o l t a g e (r gs = 20 k) j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e p d m w p o w e r d i s s i p a t i o n t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t d g s
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t n- ch an n el m osf et bs h105 ( k s h 1 0 5 ) e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 2 0 v v d s = 1 6 v , v g s = 0 v 0 . 1 v d s = 1 6 v , v g s = 0 v , t j = 1 5 0 1 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 8 v 1 0 0 n a v d s = v g s , i d = 1 m a 0 . 4 1.2 v d s = v g s , i d = 1 m a , t j = 1 5 0 0 . 1 v g s = 4 . 5 v , i d = 0 . 6 a 2 0 0 v g s = 2 . 5 v , i d = 0 . 6 a 2 5 0 v g s = 2 . 5 v , i d = 0 . 6 a t j = 1 5 0 3 7 5 v g s = 1 . 8 v , i d = 0 . 3 a 3 0 0 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 1 6 v ; i d = 0 . 6 a 1 . 6 s i n p u t c a p a c i t a n c e c i ss 1 5 2 o u t p u t c a p a c i t a n c e c o ss 7 1 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 3 3 t o t a l g a t e c h a r g e q g 3 . 9 g a t e s o u r c e c h a r g e q g s 0 . 4 g a t e d r a i n c h a r g e q g d 1 . 4 t u r n - o n d e l a y t i m e t d ( o n ) 2 t u r n - o n r i s e t i m e t r 4 . 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 4 5 t u r n - o f f f a l l t i m e t f 2 0 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 2 7 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 1 9 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 1 . 0 5 p u l s e d r e v e r s e d r a i n c u r r e n t i s m 4 . 2 d i o d e f o r w a r d v o l t a g e v s d i s = 0 . 5 a , v g s = 0 v 1 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a m r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v n s v g s = 8 v , v d s = 2 0 v , i d = 1 a , r g = 6 v g s = 0 v , v d s = 1 6 v , f = 1 m h z v g s = 4 . 5 v , v d s = 2 0 v , i d = 1 a i f = 0 . 5 a , d i / d t = 1 0 0 a / s , v g s = 0 v ; v r = 1 6 v a p f n c
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n- ch an n el m osf et bs h105 ( k s h 1 0 5 ) t y p i c a l ch a r a c te r i s i ti c s fig.1. normalised power dissipation. pd% = 100 ? p d /p d 25 ?c = f(t a ) fig.2. normalised continuous drain current. id% = 100 ? i d /i d 25 ?c = f(t a ); conditions: v gs 4.5 v fig.3. safe operating area. t a = 25 ?c i d & i dm = f(v ds ); i dm single pulse; parameter t p fig.4. transient thermal impedance. z th j-a = f(t); parameter d = t p /t fig.5. typical output characteristics, t j = 25 ?c . i d = f(v ds ); parameter v gs fig.6. typical on-state resistance, t j = 25 ?c . r ds(on) = f(i d ); parameter v gs normalised power dissipation, pd (%) 0 2 0 4 0 6 0 8 0 10 0 12 0 0 2 5 5 0 7 5 10 0 12 5 15 0 am bi en t t emp eratu re , t a (c) 0 . 1 1 1 0 10 0 100 0 1 e -0 6 1 e -0 5 1 e -0 4 1 e -0 3 1 e -0 2 1 e -0 1 1e + 0 0 1 e+ 0 1 pul se wid t h, t p (s) p eak p ul se d dra in cu rren t , i dm (a) s ingl e pul s e d = 0. 5 0 . 2 0 . 1 0 . 0 5 0 . 0 2 t p d = t p/t d p t no rma li se d dra in cu rren t , i d (%) 0 2 0 4 0 6 0 8 0 10 0 12 0 0 2 5 5 0 7 5 10 0 12 5 15 0 am bi en t t emp eratu re , t a (c) 0 0 . 5 1 1 . 5 2 2 . 5 3 3 . 5 4 4 . 5 5 0 0 . 5 1 1 . 5 2 dra in - sou rce vol tag e , v d s (v) drain current, id (a) 1 . 1 v 1 . 5 v 1 . 3 v 1 . 7 v 4 . 5 v tj = 25 c 2 . 5 v vgs = 1 . 9 v 2 . 1 v 0 . 0 1 0 . 1 1 1 0 10 0 0 . 1 1 1 0 10 0 dra in -s ou rce vol tag e , v ds (v ) peak p ul se d dra in cu rren t , i dm (a) d. c . 100 m s 10 m s rds(on) = vds/ id t p = 100 u s 1 m s 0 0 . 0 5 0 . 1 0 . 1 5 0 . 2 0 . 2 5 0 . 3 0 . 3 5 0 . 4 0 . 4 5 0 . 5 0 0 . 5 1 1 . 5 2 2 . 5 3 3 . 5 4 4 . 5 5 drain current, id (a) dra in - sou rce on resi stan ce , rds( on ) ( oh ms) vgs = 4 . 5 v 2 . 5 v 2 . 1 v 1 . 9 v 1 . 7 v tj = 25 c 1 . 5 v
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . n- ch an n el m osf et bs h105 ( k s h 1 0 5 ) t y p i c a l ch a r a c te r i s i ti c s fig.7. typical transfer characteristics. i d = f(v gs ) fig.8. typical transconductance, t j = 25 ?c . g fs = f(i d ) fig.9. normalised drain-source on-state resistance. r ds(on) /r ds(on)25 ?c = f(t j ) fig.10. gate threshold voltage. v gs(to) = f(t j ); conditions: i d = 1 ma; v ds = v gs fig.11. sub-threshold drain current. i d = f(v gs) ; conditions: t j = 25 ?c fig.12. typical capacitances, c iss , c oss , c rss . c = f(v ds ); conditions: v gs = 0 v; f = 1 mhz 0 0 . 5 1 1 . 5 2 2 . 5 3 0 0 . 5 1 1 . 5 2 2 . 5 3 g ate-s ou rce v ol tag e , vg s (v ) vds > id x rds(on) tj = 25 c 150 c drain current, id (a) threshold voltage, vgs(to), (v) 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 0 2 5 5 0 7 5 10 0 12 5 15 0 j un ct ion t emp eratu re , tj (c) m ini mu m ty pi ca l 0 0 . 5 1 1 . 5 2 2 . 5 3 3 . 5 4 0 0 . 5 1 1 . 5 2 2 . 5 3 drain current, id (a) t ran sc ondu ctan ce , g fs (s ) 1 e -0 7 1 e -0 6 1 e -0 5 1 e -0 4 1 e -0 3 1 e -0 2 1 e -0 1 1 e+ 0 0 0 0 . 2 0 . 4 0 . 6 0 . 8 1 g ate- sou rce v ol tag e , vgs (v) drain current, id (a) v ds = 5 v tj = 25 c normalised drain-source on resistance 0 . 8 0 . 9 1 1 . 1 1 . 2 1 . 3 1 . 4 1 . 5 1 . 6 1 . 7 1 . 8 0 2 5 5 0 7 5 10 0 12 5 15 0 j un ct ion t emp eratu re , tj (c) vgs = 4 . 5 v 2 . 5 v 1 . 8 v rds(on) @ tj rds(o n) @ 25c 1 0 10 0 100 0 0 . 1 1 1 0 10 0 dra in - sou rce vol tag e , vds (v) cap aci tan ces , ci ss , co ss , crss ( pf ) c i s s co ss crs s
s m d ty p e w w w . k e x i n . c o m . c n 5 m osf e t n- ch an n el m osf et bs h105 ( k s h 1 0 5 ) t y p i c a l ch a r a c te r i s i ti c s fig.13. typical turn-on gate-charge characteristics. v gs = f(q g ) fig.14. typical reverse diode current. i f = f(v sds ); conditions: v gs = 0 v; parameter t j 0 1 2 3 4 5 6 7 8 9 1 0 0 2 4 6 8 g ate ch arg e , qg (n c) vdd = 20 v rd = 20 oh ms tj = 25 c g ate-s ou rce v ol tag e , vgs (v ) -5 -4 . 5 -4 -3 . 5 -3 -2 . 5 -2 -1 . 5 -1 -0 . 5 0 -1 . 2 -1 -0 . 8 -0 . 6 -0 . 4 -0 . 2 0 dra in - sou rce vol tag e , vs ds (v) sou rce-dra in d iod e cu rren t, if (a) tj = 25 c 150 c
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